{"total_count":7,"results":[{"id":66030,"original_title":"Properties of porous silicon","title_alternative":"","title_transcription":"  ","title_alternative_transcription":null,"pub_date":"1997","statement_of_responsibility":"edited by Leigh Canham","creators":[{"full_name":"Canham, Leigh T."},{"full_name":"INSPEC (Information service)"}],"contributors":[{"full_name":"edited by Leigh Chanham"}],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xviii, 405 p. ; 29 cm","dimensions":null,"identifiers":[{"identifier_type":"isbn","body":"9780852969328"}],"subjects":[],"classfifications":[{"classification_type":"udc","term":"537.311"}],"access_address":null,"items":[{"item_identifier":"219663","shelf":"単行書9"}],"created_at":"2004-08-10T20:58:56.000+09:00","updated_at":"2025-12-15T09:29:59.491+09:00"},{"id":65921,"original_title":"Properties of amorphous silicon and its alloys","title_alternative":"","title_transcription":"  ","title_alternative_transcription":null,"pub_date":"1998","statement_of_responsibility":"edited by Tim Searle","creators":[{"full_name":"Searle, Tim"},{"full_name":"INSPEC (Information service)"}],"contributors":[{"full_name":"edited by Tim Searle"}],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xiv, 412 p. ; 29 cm","dimensions":null,"identifiers":[],"subjects":[],"classfifications":[{"classification_type":"udc","term":"537.311"}],"access_address":null,"items":[{"item_identifier":"219652","shelf":"単行書9"}],"created_at":"2004-08-06T00:33:39.000+09:00","updated_at":"2025-12-15T09:29:59.620+09:00"},{"id":77083,"original_title":"Properties, growth and applications of diamond","title_alternative":null,"title_transcription":"  ","title_alternative_transcription":null,"pub_date":"2001","statement_of_responsibility":"edited by M. H. Nazaré and A. J. Portugal","creators":[{"full_name":"Nazaré, M. H."},{"full_name":"Portugal, A. J."}],"contributors":[{"full_name":"edited by M.H. Nazare, A.J. Neves"}],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xx, 427 p. ; 29 cm","dimensions":null,"identifiers":[{"identifier_type":"isbn","body":"9780852967850"}],"subjects":[],"classfifications":[{"classification_type":"udc","term":"546.26"}],"access_address":null,"items":[{"item_identifier":"522914","shelf":"単行書16"}],"created_at":"2001-11-22T01:13:09.000+09:00","updated_at":"2025-04-21T11:00:39.620+09:00"},{"id":3361,"original_title":"Properties of lithium niobate","title_alternative":null,"title_transcription":"  ","title_alternative_transcription":null,"pub_date":"1989","statement_of_responsibility":null,"creators":[{"full_name":"INSPEC (Information service)"}],"contributors":[],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xviii, 364 p. ; 29 cm","dimensions":null,"identifiers":[],"subjects":[],"classfifications":[{"classification_type":"udc","term":"666.65"}],"access_address":null,"items":[{"item_identifier":"527454","shelf":"単行書25"}],"created_at":"2000-12-26T03:26:42.000+09:00","updated_at":"2025-12-15T09:47:39.458+09:00"},{"id":39109,"original_title":"Properties of gallium arsenide","title_alternative":null,"title_transcription":"  ","title_alternative_transcription":null,"pub_date":"1996","statement_of_responsibility":"edited by M.R. Brozel and G.E. Stillman","creators":[{"full_name":"INSPEC (Information service)"},{"full_name":"Brozel, M. R. (Michael R.)"},{"full_name":"Stillman, G. E."}],"contributors":[],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xxvii, 981 p. ; 29 cm","dimensions":null,"identifiers":[{"identifier_type":"isbn","body":"9780852968857"}],"subjects":[],"classfifications":[{"classification_type":"udc","term":"544.03"}],"access_address":null,"items":[{"item_identifier":"218566","shelf":"単行書15"}],"created_at":"2000-10-28T01:58:58.000+09:00","updated_at":"2025-12-15T09:36:48.433+09:00"},{"id":69188,"original_title":"Properties of crystalline silicon","title_alternative":"","title_transcription":"  ","title_alternative_transcription":null,"pub_date":"1999","statement_of_responsibility":"edited by Robert Hull","creators":[{"full_name":"Hull, Robert"},{"full_name":"Institution of Electrical Engineers"}],"contributors":[{"full_name":"edited by Robert Hull"}],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xxvi, 1016 p. ; 29 cm","dimensions":null,"identifiers":[{"identifier_type":"isbn","body":"9780852969335"}],"subjects":[],"classfifications":[{"classification_type":"udc","term":"537.311"}],"access_address":null,"items":[{"item_identifier":"218191","shelf":"単行書9"}],"created_at":"2000-01-20T22:52:50.000+09:00","updated_at":"2025-12-15T09:29:59.746+09:00"},{"id":39112,"original_title":"Properties of silicon germanium and SiGe : carbon","title_alternative":"","title_transcription":"  ","title_alternative_transcription":null,"pub_date":"1999","statement_of_responsibility":"edited by Erich Kasper and Klara Lyutovich","creators":[{"full_name":"Kasper, Erich"},{"full_name":"Lyutovich, Klara"}],"contributors":[],"publishers":[{"full_name":"INSPEC, Institution of Electrical Engineers"}],"publication_place":null,"extent":"xv, 358 p. ; 29 cm","dimensions":null,"identifiers":[{"identifier_type":"isbn","body":"9780852967836"}],"subjects":[],"classfifications":[{"classification_type":"udc","term":"537.311"}],"access_address":null,"items":[{"item_identifier":"218569","shelf":"単行書9"}],"created_at":"1901-01-01T09:00:00.000+09:00","updated_at":"2025-12-15T09:29:59.269+09:00"}]}