Optical properties of semiconductor nanocrystals Gaponenko, S. V. (Sergey V.) creator text Cambridge Unviersity Press 2005-01-01 00:00:00 +0900 unknown eng
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xiv, 245 p. ; 23 cm 621.315.5 9780521019231 2024-02-19 16:26:09 +0900 2025-12-15 09:43:48 +0900 https://library.nims.go.jp/manifestations/132609 ZnO系の最新技術と応用 = ZnO its most up‐to‐date technology and application, perspectives </titleInfo> <name type="personal"> <namePart>八百, 隆文</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>シーエムシー出版</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">jpn</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>v, 237p ; 27cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note>文献あり</note> <identifier type="isbn">9784882316619</identifier> <recordInfo> <recordCreationDate>2009-07-24 04:23:31 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:47 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/77954</recordIdentifier> </recordInfo> <titleInfo> <title>Proceedings of the 9th International Conference on Ternary and Multinary Compounds : ICTMC-9, Yokohama, Japan, August 8-12, 1993 </titleInfo> <name type="personal"> <namePart>International Conference on Ternary and Multinary Compounds</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="corporate"> <namePart>応用物理学会</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>edited by K. Masumoto, T. Irie, S. Iida, N. Yamamoto</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Japanese Journal of Applied Physics</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>786 p. ; 30 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note/> <recordInfo> <recordCreationDate>2006-04-25 23:53:06 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:45 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/71692</recordIdentifier> </recordInfo> <titleInfo> <title>Properties and devices </titleInfo> <name type="personal"> <namePart>Nalwa, Hari Singh</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>edited by Hari Singh Nalwa</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Academic Press</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>xv, 290 p. ; 29 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note>Includes bibliographical references and index</note> <identifier type="isbn">9780125139199</identifier> <recordInfo> <recordCreationDate>2001-10-18 23:39:48 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:45 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/43296</recordIdentifier> </recordInfo> <titleInfo> <title>Materials and processing </titleInfo> <name type="personal"> <namePart>Nalwa, Hari Singh</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>edited by Hari Singh Nalwa</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Academic Press</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>xvii, 319 p. ; 29 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note>Includes bibliographical references and index</note> <identifier type="isbn">9780125139182</identifier> <recordInfo> <recordCreationDate>2001-10-18 23:10:00 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:43 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/43295</recordIdentifier> </recordInfo> <titleInfo> <title>Proceedings of the 4th International Conference on Ternary and Multinary Compounds, Tokyo, August 27-29, 1980 </titleInfo> <name type="personal"> <namePart>International Conference on Ternary and Multinary Compounds</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="corporate"> <namePart>応用物理学会</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Japanese Journal of Applied Physics</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>403 p. ; 26 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note/> <recordInfo> <recordCreationDate>2000-05-24 23:07:02 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:44 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/38484</recordIdentifier> </recordInfo> <titleInfo> <title>Electron spin resonance in semiconductors </titleInfo> <name type="personal"> <namePart>Lancaster, Gordon</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>Assenheim, H. M. (Harry Michael)</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Hilger & Watts</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>vii, 152 p. ; 23 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note>Includes index</note> <recordInfo> <recordCreationDate>1999-05-19 07:50:21 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:46 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/72088</recordIdentifier> </recordInfo> <titleInfo> <title>Refractory semiconductor materials Tugoplavkie Almazopodobnye Poluprovodniki: ТУГОПЛАВКИЕ АЛМАЗОПОДОБНЫЕ ПОЛУПРОВОДНИКИ Shmartsev, Yu. V. creator Valov Yu. A. creator Borshchevkii A. S. creator text Consultants Bureau unknown eng
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ix, 93 p. ; 28 cm 621.315.5 1999-05-19 07:47:50 +0900 2025-12-15 09:43:46 +0900 https://library.nims.go.jp/manifestations/72098 Soviet research in new semiconductor materials </titleInfo> <name type="personal"> <namePart>Nasledov, D.N.</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>Goryunova, N.A.</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>edited by D.N. Naslebov, N.A. Goryunoya; authorized translation from the Russian by A. Tybulewicz</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Consultants Bureau</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>121 p. ; 28 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note>The original Russian text was published by the Soviet State Publishing House, Kartya Moldovenyaské"in Kishinev, 1964."--verso of t.p</note> <recordInfo> <recordCreationDate>1999-05-19 07:47:45 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:44 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/72099</recordIdentifier> </recordInfo> <titleInfo> <title>Materials used in semiconductor devices </titleInfo> <name type="personal"> <namePart>Hogarth, C. A. (Cyril Alfred)</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>edited by C.A. Hogarth</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Interscience Publishers</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>vii, 243 p. ; 24 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.315.5</classification> <abstract/> <note>Includes bibliographies</note> <recordInfo> <recordCreationDate>1901-01-01 09:00:00 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:43:45 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/41724</recordIdentifier> </recordInfo> </modsCollection>