Modern semiconductor device physics </titleInfo> <name type="personal"> <namePart>Sze, S. M.</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>edited by S.M. Sze</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>J.Wiley</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>xii, 556 p. ; 25 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">537.311</classification> <abstract/> <note>"A Wiley-Interscience publication."//Includes bibliographical references and index</note> <identifier type="isbn">9780471152378</identifier> <recordInfo> <recordCreationDate>2002-04-25 03:03:02 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:29:56 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/40412</recordIdentifier> </recordInfo> <titleInfo> <title>Solid-state chemistry of inorganic materials III : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A. </titleInfo> <name type="personal"> <namePart>Geselbracht, Margret J.</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>Materials Research Society. Meeting</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Materials Research Society</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>1 v. (various pagings) ; 24 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">MRS</classification> <abstract/> <note>Includes bibliographical references and indexes</note> <identifier type="isbn">9781558995680</identifier> <recordInfo> <recordCreationDate>2002-04-24 20:47:16 +0900</recordCreationDate> <recordChangeDate>2025-12-03 16:34:43 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/40413</recordIdentifier> </recordInfo> <titleInfo> <title>Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A. </titleInfo> <name type="personal"> <namePart>Leon, Rosa</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>Symposium on Semiconductor Quantum Dots</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Materials Research Society</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>1 v. (various paging) ; 24 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">MRS</classification> <abstract/> <note>Includes bibliographical references and indexes</note> <identifier type="isbn">9781558995529</identifier> <recordInfo> <recordCreationDate>2002-04-24 20:33:57 +0900</recordCreationDate> <recordChangeDate>2025-12-03 16:34:42 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/40411</recordIdentifier> </recordInfo> <titleInfo> <title>Nanotubes and related materials : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A. </titleInfo> <name type="personal"> <namePart>Rao, Apparao M.</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>Bernier, Patrick</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>Materials Research Society</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">eng</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>1 v. ; 24 cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">MRS</classification> <abstract/> <note>Includes bibliographical references and indexes</note> <identifier type="isbn">9781558995437</identifier> <recordInfo> <recordCreationDate>2002-04-24 20:27:16 +0900</recordCreationDate> <recordChangeDate>2025-12-03 16:34:41 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/40410</recordIdentifier> </recordInfo> <titleInfo> <title>図書館ハンドブック </titleInfo> <name type="personal"> <namePart>日本図書館協会図書館ハンドブック編集委員会</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>日本図書館協会</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">jpn</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>xvi, 619p ; 22cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">(02)</classification> <abstract/> <note>参考文献: p[459]-474//年表: p[509]-588</note> <identifier type="isbn">9784820490029</identifier> <recordInfo> <recordCreationDate>2002-02-19 20:36:27 +0900</recordCreationDate> <recordChangeDate>2024-11-28 21:00:19 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/5550</recordIdentifier> </recordInfo> <titleInfo> <title>半導体デバイス工程評価技術 : ライフタイム、DLTS評価を中心として </titleInfo> <name type="personal"> <namePart>宇佐美, 晶</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>徳田, 豊</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>リアライズ社</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">jpn</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>628p ; 27cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.382</classification> <abstract/> <note>各章末:参考文献</note> <recordInfo> <recordCreationDate>2002-02-19 02:23:47 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:44:18 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/5545</recordIdentifier> </recordInfo> <titleInfo> <title>最新プラズマプロセスのモニタリング技術と解析・制御 </titleInfo> <name type="personal"> <namePart>林, 康明</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>林 康明</namePart> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>リアライズ社</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">jpn</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>4, 174, 4p ; 30cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">533.9</classification> <abstract/> <note>各章末:参考文献</note> <identifier type="isbn">9784947655981</identifier> <recordInfo> <recordCreationDate>2002-02-19 01:47:58 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:28:06 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/42438</recordIdentifier> </recordInfo> <titleInfo> <title>シリコン結晶欠陥の基礎物性とその評価法 Basic properties of defects in silicon and their characterizing technologies 上浦, 洋一 creator text リアライズ社 unknown jpn
volume
6,192,10p ; 30cm 621.382 参考文献: p179-192 9784947655974 2002-02-19 01:43:40 +0900 2025-12-15 09:44:18 +0900 https://library.nims.go.jp/manifestations/65822 半導体デバイス界面の汚染・損傷の評価と対策 </titleInfo> <name type="personal"> <namePart>黒田, 司</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <name type="personal"> <namePart>岩黒, 弘明</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>リアライズ社</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">jpn</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>222p ; 27cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">621.382</classification> <abstract/> <note>各章末: 参考文献</note> <identifier type="isbn">9784947655509</identifier> <recordInfo> <recordCreationDate>2002-02-19 01:38:20 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:44:17 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/5544</recordIdentifier> </recordInfo> <titleInfo> <title>薄膜の力学的特性評価技術 : トライボロジー・内部応力・密着性 </titleInfo> <name type="personal"> <namePart>金原, 粲</namePart> <role> <roleTerm type="text" authority="marcrelator">creator</roleTerm> </role> </name> <typeOfResource>text</typeOfResource> <originInfo> <publisher>リアライズ社</publisher> <dateIssued/> <frequency>unknown</frequency> </originInfo> <language> <languageTerm authority="iso639-2b" type="code">jpn</languageTerm> </language> <physicalDescription> <form authority="marcform">volume</form> <extent>610p, 図版2p ; 27cm</extent> </physicalDescription> <subject> </subject> <classification authority="udc">539.3</classification> <abstract/> <note>各節末: 文献</note> <recordInfo> <recordCreationDate>2002-02-19 01:32:51 +0900</recordCreationDate> <recordChangeDate>2025-12-15 09:33:17 +0900</recordChangeDate> <recordIdentifier>https://library.nims.go.jp/manifestations/5158</recordIdentifier> </recordInfo> </modsCollection>