manifestation_id	original_title	title_alternative	title_transcription	statement_of_responsibility	serial	manifestation_identifier	creator	contributor	publisher	date_of_publication	year_of_publication	publication_place	manifestation_created_at	manifestation_updated_at	carrier_type	content_type	frequency	language	isbn	issn	ncid	volume_number	volume_number_string	edition	edition_string	issue_number	issue_number_string	serial_number	extent	start_page	end_page	dimensions	height	width	depth	manifestation_price	access_address	manifestation_required_role	abstract	description	identifier:unknown	identifier:nbn	identifier:isbn10	identifier:iss_itemno	identifier:online_isbn	identifier:print_isbn	identifier:print_issn	identifier:online_issn	identifier:escidoc	identifier:nims	series_statement_id	series_statement_original_title	series_statement_title_subseries	series_statement_title_subseries_transcription	series_statement_title_transcription	series_statement_creator	series_statement_volume_number	series_statement_series_master	series_statement_root_manifestation_id	series_statement_manifestation_id	series_statement_position	series_statement_note	series_statement_created_at	series_statement_updated_at	subject:ndlsh	subject:unknown	subject:bsh	classification:ndc8	classification:ndc9	classification:udc	doi	jpno	ncid	lccn	iss_itemno	item_id	item_identifier	binding_item_identifier	call_number	library	shelf	item_note	accepted_at	acquired_at	item_created_at	item_updated_at
103306	Vanadium doping in YB44Si1.0						""	""	""	2010-06-14 00:00:00 +0900	2010		2015-05-28 18:03:13 +0900	2023-07-31 14:23:51 +0900	online_resource	text	unknown	unknown	""	""																	https://hdl.handle.net/20.500.11932/457941	Guest	"Vanadium doping in yttrium boron-rich boride; YB44Si1.0, is investigated. Vanadium atoms occupy two sites. First, newly discovered site with site occupancy of approximately 3% is far from yttrium atoms and is coordinated ""tetrahedrally"" by three boron icosahedra and one B12Si3 polyhedron. Another is Si/V mixed-occupation site with site occupancy of ~ 63/6.2 %; it is close to yttrium atoms and is tetrahedrally coordinated by four boron icosahedra. Chemical formula determined from the structure analysis is Y0.96V0.062B41.2Si0.93. Magnetic susceptibility of V-doped YB44Si1.0 was measured from 2 K to 300 K. The vanadium doping in YB44Si1.0 did not result in superconductivity."		""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	""	yttrium boron-rich boride//YB44Si1.0//Vanadium doping//boron icosahedron//yttrium boron-rich boride//YB44Si1.0//Vanadium doping//boron icosahedron//yttrium boron-rich boride//YB44Si1.0//Vanadium doping//boron icosahedron	""	""	""	""						96572				web	web				2023-07-31 14:23:51 +0900	2023-07-31 14:23:51 +0900