[M] GaN Epitaxial Growth on Sapphire Substrates by NH3 SourceMolecular Beam Epitaxy

Creator: Ohshima, Naoki Sugihara, Akihiro Yoshida, Naoya Okabe, Naohiko Contributor: Okamoto, Ｋ. Kita, Hidetoshi Nakayama, Noriaki Yamamoto, Setsuo Higa, Mitsuru Ohshima, Naoki Ioku, Koji Hashimo, Kazuhiko Schmidt, Helmu Ohtaki, Michitaka Terasaki, Ichiro Kajitani, Tsuyoshi Funahashi, Ryoji Akashi, Mitsuru Suda, Yasuo Aoyagi, Takao Taguchi, Takahisa Ohgushi, Hajime Tanaka, Junzo Yamashita, Kimihiro Kobayashi, Hisatoshi Miyahara, Yuji Taniguchi, Akiyoshi Otsuka, Hidenori (Date of publication: 2004)
https://hdl.handle.net/20.500.11932/1207549

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Collection:	元素戦略ライブラリー
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Language:	unknown
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Identifier:	Handle URI: https://hdl.handle.net/20.500.11932/1207549
Full-text file	Transactions_of_the_Materials_Research_Society_of_Japan_No6_OCR_3.pdf (0.27 MB) NIMS Read Only License: Prohibit Commercial Use (NIMS only)
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