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Vanadium doping in YB44Si1.0 
(出版日: 2010-06-14)
https://hdl.handle.net/20.500.11932/457941 
| コレクション: | NIMS成果物 |
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オンラインリソース
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| 言語: | 不明 |
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| 識別子: | Handle URI: https://hdl.handle.net/20.500.11932/457941 |
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| アブストラクト: |
Vanadium doping in yttrium boron-rich boride; YB44Si1.0, is investigated. Vanadium atoms occupy two sites. First, newly discovered site with site occupancy of approximately 3% is far from yttrium atoms and is coordinated "tetrahedrally" by three boron icosahedra and one B12Si3 polyhedron. Another is Si/V mixed-occupation site with site occupancy of ~ 63/6.2 %; it is close to yttrium atoms and is tetrahedrally coordinated by four boron icosahedra. Chemical formula determined from the structure analysis is Y0.96V0.062B41.2Si0.93. Magnetic susceptibility of V-doped YB44Si1.0 was measured from 2 K to 300 K. The vanadium doping in YB44Si1.0 did not result in superconductivity. |
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